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Ono, Masao; Okayasu, Satoru; Iguchi, Yusuke*; Esaka, Fumitaka; Bagum, R.*; Haruki, Rie; Mashimo, Tsutomu*
Transactions of the Japan Society for Aeronautical and Space Sciences, Aerospace Technology Japan (Internet), 12(ists29), p.Tq_1 - Tq_3, 2014/04
We had realized the composition gradient of elements or isotopes in some binary alloys or single element by solid-state centrifugation. While, it might difficult to realize graded structure of elements in binary ionic crystal by centrifugation as it strongly keeps their stoichiometry. However, isotope fractionation in binary ionic crystal by centrifugation might be expected as the self-diffusion of ions occurs. We have planed the ultracentrifuge experiments on -AgI superionic conductor to investigate the isotope effect in binary ionic crystal under a strong centrifugal acceleration field. -AgI superionic conductor is suitable for the confirmation experiment as it is an intrinsic ionic crystal and Ag ions have high diffusivity. For the first stage, we have experimentally searched the experimental conditions of magnitude of centrifugal acceleration and temperature that ensure the experiment without decomposition. It is confirmed that the combination of experimental conditions of up to 6.110 g, 350C, 24h ensure the experiment without decomposition at least.
Yokota, Kumiko*; Tagawa, Masahito*; Kitamura, Akira*; Matsumoto, Koji*; Yoshigoe, Akitaka; Teraoka, Yuden; Fontaine, J.*; Belin, M.*
Transactions of the Japan Society for Aeronautical and Space Sciences, Space Technology Japan (Internet), 7(ists26), p.Pc_37 - Pc_42, 2009/06
The effect of hyperthermal atomic oxygen (AO) exposure on a surface property of Si-doped DLC was investigated. Two types of DLC were tested which contain Si atoms approximately 10 at% and 20 at%. Surface analytical results of high-resolution X-ray photoelectron spectroscopy using synchrotron radiation (synchrotron radiation photoemission spectroscopy; SR-PES) as well as Rutherford backscattering spectroscopy (RBS) have been used for characterization of the AO-exposed Si-doped DLC. It was identified by SR-PES that the SiO layer was formed by the hyperthermal AO exposure at the Si-doped DLC surface. RBS data indicates that AO exposure leads to severe thickness loss on the non-dope DLC, in contrast, SiO layer formed by the hyperthermal atomic oxygen reaction at the Si-doped DLC protects the DLC underneath the SiO layer.